A physically based predictive model of Si/SiO2 interface trap generation resulting from the presence of holes in the SiO2

This publication has 24 references indexed in Scilit:

• A model of hole trapping in SiO2 films on silicon
  Journal of Applied Physics, 1997
• Molecular hydrogen, E' center hole traps, and radiation induced interface traps in MOS devices
  IEEE Transactions on Nuclear Science, 1993
• Generation mechanisms of paramagnetic centers by gamma-ray irradiation at and near the Si/SiO2 interface
  Journal of Applied Physics, 1993
• Correlation of Fixed Positive Charge and E′γ Centers as Measured via Electron Injection and Electron Paramagnetic Resonance Techniques
  Journal of the Electrochemical Society, 1991
• Post-irradiation behavior of the interface state density and the trapped positive charge
  IEEE Transactions on Nuclear Science, 1990
• Kinetics of ${\mathrm{H}}_2$ passivation of $P_b$ centers at the (111) Si-${\mathrm{SiO}}_2$ interface
  Physical Review B, 1988
• Electron and hole traps in SiO/sub 2/ films thermally grown on Si substrates in ultra-dry oxygen
  IEEE Transactions on Electron Devices, 1988
• Time-dependent interface trap effects in MOS devices
  IEEE Transactions on Nuclear Science, 1988
• Hole traps and trivalent silicon centers in metal/oxide/silicon devices
  Journal of Applied Physics, 1984
• Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance II
  Japanese Journal of Applied Physics, 1972