GaInAsP/InP Multiple Short Cavity Laser with λ/4-Air Gap/Semiconductor Bragg Reflectors
- 1 December 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (12A) , L1461
- https://doi.org/10.1143/jjap.37.l1461
Abstract
A room temperature operation of multiple cavity (MC) laser consisting of λ/4-air gap (=0.39 µm) and semiconductor reflectors was fabricated using two steps organometallic vapour-phase epitaxy (OMVPE) and two steps wet chemical etching. The threshold current as low as 78 mA (J th = 1.25 kA/cm2) was obtained for a total cavity length 164 µm (Pitch Λ: 20 µm; 8 elements) and stripe width of 40 µm. The effective power reflectivity of this cavity structure was estimated to be higher than 92%.Keywords
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