Long Term Transient Radiation Response of GaAs FETs Fabricated on an AlGaAs Buffer Layer
- 1 January 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 33 (6) , 1442-1446
- https://doi.org/10.1109/tns.1986.4334620
Abstract
A radiation hardening method for GaAs FETs has been developed using an AlGaAs buffer layer. The long term transient response resulting from irradiation with 40 MeV electrons and flash x-rays was reduced by an order of magnitude compared to FETs fabricated without the buffer layer. A model is discussed to explain the reduced transient effect in which the buffer layer plays the role of isolating the active layer from radiation induced stored charge in the substrate.Keywords
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