Modulation of carrier distributions in delta-doped quantum wells
- 9 September 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (11) , 1344-1346
- https://doi.org/10.1063/1.105303
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Delta-doped quantum well structures grown by molecular beam epitaxyApplied Physics Letters, 1990
- Relationship between photoluminescence spectra and low-field electrical properties of modulation-doped AlGaAs/GaAs quantum wellsJournal of Applied Physics, 1990
- Transport properties of InxGa1−xAs/GaAs strained quantum well delta-doped heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1990
- Theory and experiment of capacitance-voltage profiling on semiconductors with quantum-confinementJournal of Electronic Materials, 1990
- Beryllium δ doping of GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1990
- Characteristics of AlGaAs/GaAs quantum-well delta-doped channel FET (QUADFET)IEEE Transactions on Electron Devices, 1990
- DC and AC characteristics of delta-doped GaAs FETIEEE Electron Device Letters, 1989
- Subband physics for a “realistic” δ-doping layerSurface Science, 1988
- Diffusion studies of the Si δ-doped GaAs by capacitance-voltage measurementJournal of Applied Physics, 1988