Deformation-Induced Defects in p-Type Germanium
- 16 October 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 79 (2) , K123-K126
- https://doi.org/10.1002/pssa.2210790244
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- On the Energy Spectrum of Dislocations in SiliconPhysica Status Solidi (a), 1982
- Eigenschaften der Energieniveaus von Versetzungen in SiliziumPhysica Status Solidi (a), 1981
- Energy Spectra Of Dislocations In Silicon And GermaniumJournal of Microscopy, 1980
- Optical excitation of dislocation states in germanium. II. Analysis of the experimental resultsPhysica Status Solidi (a), 1977
- Optical excitation of dislocation states in germanium. I. ExperimentsPhysica Status Solidi (a), 1977
- Recombination of charge carriers at dislocations in germaniumPhysica Status Solidi (a), 1973
- Investigations of Photoelectric Phenomena on p‐type Germanium with DislocationsPhysica Status Solidi (b), 1969
- Die elektrischen Eigenschaften von Versetzungen in GermaniumPhysica Status Solidi (b), 1967
- Trapping Processes at Dislocations in Plastically Bent GermaniumPhysica Status Solidi (b), 1966
- Dislocations as Traps for Holes in GermaniumPhysica Status Solidi (b), 1965