Characterization of beryllium-doped molecular beam epitaxial grown GaAs by photoluminescence
- 1 February 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 148 (1-2) , 35-40
- https://doi.org/10.1016/0022-0248(94)00871-x
Abstract
No abstract availableKeywords
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