Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion
- 1 July 1998
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 27 (7) , 900-907
- https://doi.org/10.1007/s11664-998-0116-1
Abstract
No abstract availableKeywords
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