Low-power 1/2 frequency dividers using 0.1- mu m CMOS circuits built with ultrathin SIMOX substrates
- 1 April 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 28 (4) , 510-512
- https://doi.org/10.1109/4.210036
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Subfemtojoule deep submicrometer-gate CMOS built in ultra-thin Si film on SIMOX substratesIEEE Transactions on Electron Devices, 1991
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