Temperature dependence of atomic scale morphology in Si homoepitaxy between 350 and 800 °C on Si (100) by molecular beam epitaxy
- 1 September 2001
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 19 (5) , 2307-2311
- https://doi.org/10.1116/1.1384559
Abstract
No abstract availableKeywords
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