Spatial resolution of selectively deposited diamond stripes on ion implanted Si(100)
- 3 January 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (1) , 73-75
- https://doi.org/10.1063/1.110872
Abstract
Diamond stripes were successfully grown on the P+ ion implanted Si(100) substrate without the diamond abrasives pretreatment. The pattern of a transmission line model (TLM) was used to define the shape of the diamond stripes on Si(100). Lateral resolution of diamond stripes depended on the thickness of SiO2 on the patterned Si(100) substrate. The width of each diamond stripe was about the same as that of the corresponding SiO2 open window for the SiO2 layer of 18 000 and 9000 Å. A critical SiO2 thickness existed for diamond stripe deposition on the implanted Si(100), below which good spatial resolution of diamond stripes could not be achieved.Keywords
This publication has 9 references indexed in Scilit:
- Selective Deposition of Diamond Films on Ion‐Implanted Si(100) by Microwave Plasma Chemical Vapor DepositionJournal of the Electrochemical Society, 1992
- Selective growth of polycrystalline diamond thin films on a variety of substrates using selective damaging by ultrasonic agitationJournal of Materials Research, 1992
- Laser patterning of diamond filmsJournal of Applied Physics, 1992
- Effects of local facet and lattice damage on nucleation of diamond grown by microwave plasma chemical vapor depositionApplied Physics Letters, 1992
- Microfabrication of diamond films: selective deposition and etchingSurface and Coatings Technology, 1991
- Selective and low temperature synthesis of polycrystalline diamondJournal of Materials Research, 1991
- High-temperature thin-film diamond field-effect transistor fabricated using a selective growth methodIEEE Electron Device Letters, 1991
- Selected-area deposition of diamond filmsJournal of Applied Physics, 1990
- Focused ion-beam crater arrays for induced nucleation of diamond filmJournal of Vacuum Science & Technology B, 1989