Photoluminescence properties of Cu-doped GaSe
- 20 October 1981
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 14 (29) , 4335-4346
- https://doi.org/10.1088/0022-3719/14/29/021
Abstract
Photoluminescence spectra of undoped and Cu-doped crystals of the layered semiconductor GaSe have been measured in the temperature range from 80K to room temperature. The main modification of the spectra in doped crystals with respect to those of undoped samples is the appearance of two new bands and the enhancement of light emission. A detailed analysis of spectra, by varying excitation intensity and temperature, enabled the authors to analyse the defect levels involved in the transitions. A simple kinetic model for indirect free and bound excitonic transitions in doped samples is proposed.Keywords
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