Optoelectronic resonant cavity technology based on inversion channel devices
- 1 January 1992
- journal article
- research article
- Published by Springer Nature in Optical and Quantum Electronics
- Vol. 24 (2) , S133-S146
- https://doi.org/10.1007/bf00625820
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Near-infrared high-gain strained layer InGaAs heterojunction phototransistors: Resonant periodic absorptionApplied Physics Letters, 1991
- Three-terminal operation of the double-heterostructure optoelectronic switching laserApplied Physics Letters, 1991
- Strained multiquantum well double heterostructure optoelectronic switch and associated heterojunction FETElectronics Letters, 1991
- Dynamic, polarization, and transverse mode characteristics of vertical cavity surface emitting lasersIEEE Journal of Quantum Electronics, 1991
- Current versus Light-Output Characteristics with No Definite Threshold in pnpn Vertical to Surface Transmission Electro-Photonic Devices with a Vertical CavityJapanese Journal of Applied Physics, 1991
- Enhancement of quantum efficiency in thin photodiodes through absorptive resonanceJournal of Lightwave Technology, 1991
- Matrix addressable vertical cavity surface emitting laser arrayElectronics Letters, 1991
- 90% coupling of top surface emitting GaAs/AlGaAs quantum well laser output into 8 µm diameter core silica fibreElectronics Letters, 1990
- Non-linear population processes of Er3+ laser levels in chromium-doped garnet crystalsOptical and Quantum Electronics, 1990
- Surface-emitting microlasers for photonic switching and interchip connectionsOptical Engineering, 1990