Avalanche noise measurement in thin Si p+-i-n+ diodes
- 20 June 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (26) , 3926-3928
- https://doi.org/10.1063/1.126823
Abstract
The avalanche multiplication and excess noise properties of a range of submicron Si diodes have been investigated. In these thin diodes the excess noise is found to fall below that predicted by conventional local noise theory. Modeling of the multiplication and excess noise using a recurrence method, which includes the dead space for carrier ionization, gives good agreement with experiment. This suggests that the dead space can reduce the excess noise in submicron Si diodes.Keywords
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