Stress relief from alternately buckled dimers in Si(100)
- 15 December 1993
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 48 (23) , 17350-17353
- https://doi.org/10.1103/physrevb.48.17350
Abstract
First-principles calculations of the surface stress for the c(4×2) buckled-dimer reconstruction of the clean Si(100) surface reveal a significant relief of a compressive contribution to the stress in the direction parallel to the dimer rows, and thus a decrease of the stress anisotropy, when compared to similar calculations for 2×1 reconstructions. We show that the mechanism involved is not just the buckling but its alternation along a dimer row. Calculations using the c(4×2) model for the clean surface are also in close quantitative agreement with the experimentally measured excess tensile stress of the As-covered surface.Keywords
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