Advances in GaAs HBT power amplifiers for cellular phones and military applications
- 23 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This paper provides a synopsis of the research and development efforts in the USA in power amplifiers designed with GaAs Heterojunction Bipolar Transistor (HBT) technology. Design issues, performance and reliability of power amplifiers using AlGaAs/GaAs HBTs for RF, microwave and millimeter-wave applications are discussed. Key device parameters influencing different frequency applications are highlighted.Keywords
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