Dopant-surface migration and interactions from reflection high-energy electron diffraction dynamics
- 15 February 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (4) , 1760-1763
- https://doi.org/10.1063/1.351210
Abstract
The effect of silicon and beryllium atom coverage on the intensity of electrons specularly reflected from vicinal (100) GaAs is reported. Intensities typically drop to minima when concentrations approach gallium step-site densities, and increase to broad maxima associated with changes in dominant reconstruction order. Transient relaxation effects are also reported together with possible applications to surface migration kinetics, dopant flux calibrations, and determination of misorientation angles.This publication has 16 references indexed in Scilit:
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