Room temperature emission in narrow (14 nm) Cd0.35Zn0.65SeZnSe quantum wires with strong lateral confinement effects
- 2 February 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 159 (1-4) , 455-458
- https://doi.org/10.1016/0022-0248(95)00717-2
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Lateral quantization effects in lithographically defined CdZnSe/ZnSe quantum dots and quantum wiresApplied Physics Letters, 1995
- Photoluminescence efficiency study of wet chemically etched CdTe/Cd1−xMgxTe wiresApplied Physics Letters, 1995
- Deep Etched ZnSe‐Based Nanostructures for Future Optoelectronic ApplicationsPhysica Status Solidi (b), 1995
- Optical study of II-VI semiconductor nanostructuresSemiconductor Science and Technology, 1994
- Nanometer fabrication techniques for wide-gap II-VI semiconductors and their optical characterizationJournal of Electronic Materials, 1994
- Room temperature study of strong lateral quantization effects in InGaAs/InP quantum wiresApplied Physics Letters, 1994
- Photoluminescence in ZnSe-based quantum well wire structuresApplied Physics Letters, 1993
- Ultraviolet and blue holographic lithography of ZnSe epilayers and heterostructures with feature size to 100 nm and belowApplied Physics Letters, 1990
- Time-resolved investigations of sidewall recombination in dry-etched GaAs wiresApplied Physics Letters, 1990
- Linewidth dependence of radiative exciton lifetimes in quantum wellsPhysical Review Letters, 1987