Modeling of Ge-Si heterojunction bipolar transistors for use in silicon monolithic millimeter-wave integrated circuits
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 37 (12) , 2046-2050
- https://doi.org/10.1109/22.44120
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- High-speed performance of Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistorsIEEE Electron Device Letters, 1989
- Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Band alignments of coherently strained GexSi1−x/Si heterostructures on 〈001〉 GeySi1−y substratesApplied Physics Letters, 1986
- GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1984
- Bipolar transistor with minimized collector-to-base junction areaIEEE Transactions on Electron Devices, 1983