The critical field for donor-acceptor twins in silicon
- 15 February 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (4) , 1406-1407
- https://doi.org/10.1063/1.334498
Abstract
Donor-acceptor twins in silicon can exist only in zones where the electric field exceeds a critical value. This hypothesis removes some anomalies in the description of current-voltage characteristics of almost ideal silicon p-n junctions. The critical field seems to depend upon the final anneal temperature—about 2×104 V/cm for an anneal at 950 °C and of the order of 4×103 V/cm for anneals at 800 and 650 °C.This publication has 3 references indexed in Scilit:
- An extension of the model for the extracurrent in almost ideal silicon junction diodesJournal of Applied Physics, 1984
- Mechanism of non-Shockley conduction in almost ideal silicon junction diodesJournal of Applied Physics, 1984
- A comparison of gettering techniques for very large scale integrationJournal of Applied Physics, 1984