The use of SnTe as the source of donor impurities in GaAs grown by molecular beam epitaxy
- 1 July 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (1) , 67-70
- https://doi.org/10.1063/1.90933
Abstract
The use of SnTe as a source of donor impurities in the growth of n‐type GaAs by molecular beam epitaxy (MBE) is investigated. Net carrier concentrations n between ∼1015 and ∼1018 cm−3 have been obtained with corresponding mobilities of ∼38 000 and 2100 cm2 V−1 sec−1 at 77 °K. Sharp changes in donor concentration have been obtained with no evidence for Sn accumulation at the surface. However, at higher donor concentrations (∼1018 cm−3) Te is found to accumulate at the surface.Keywords
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