Elimination of a DX-center by an AlAs/n-GaAs superlattice and its application to 2DEGFETs

This publication has 12 references indexed in Scilit:

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• Growth Condition Independence Observed for DX Center in Si-doped AlGaAs Grown by Molecular Beam Epitaxy
  Japanese Journal of Applied Physics, 1985
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  Japanese Journal of Applied Physics, 1985
• Influence of MBE Growth Conditions on Persistent Photoconductivily Effects in N-AlGaAs and Selectively Doped GaAs/AlGaAs Heterostructures
  Japanese Journal of Applied Physics, 1985
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• Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al–Ga–As:Si Solid System –a Novel Short Period AlAs/n-GaAs Superlattice–
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• Instabilities in modulation doped field-effect transistors (MODFETs) at 77 K
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• Temperature dependence of the I–V characteristics of modulation-doped FETs
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• Si and Sn Doping in Al_xGa_1-xAs Grown by MBE
  Japanese Journal of Applied Physics, 1982
• Trapping characteristics and a donor-complex ($\mathrm{DX}$) model for the persistent-photoconductivity trapping center in Te-doped ${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$
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