Surface recombination effects in an improved theory of a p-type MIS solar cell
- 30 November 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (11) , 1139-1145
- https://doi.org/10.1016/0038-1101(80)90024-6
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- New experimental evidence for minority-carrier MIS diodesApplied Physics Letters, 1979
- Recombination effects in p-type silicon S.B.S.C'SSolid-State Electronics, 1978
- Theory of the Schottky barrier solar cellProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1977
- On the direct currents through interface states in metal-semiconductor contactsSolid-State Electronics, 1975
- Tunneling to traps in insulatorsJournal of Applied Physics, 1972
- Theory of tunneling into interface statesSolid-State Electronics, 1970
- Recombination MechanismsPhysica Status Solidi (b), 1968
- Surface States and Barrier Height of Metal-Semiconductor SystemsJournal of Applied Physics, 1965
- Recombination statistics for auger effects with applications to p-n junctionsSolid-State Electronics, 1963