A comparison between furnace and cw laser annealing of a-Si : evidence of different crystallization states
- 1 January 1982
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 17 (12) , 783-786
- https://doi.org/10.1051/rphysap:019820017012078300
Abstract
Two states of crystallization of silicon can be obtained by cw laser annealing of amorphous material before melting temperature. Comparison between furnace and cw laser annealing of amorphous films give insights about the nucleation and growth process at high temperaturesKeywords
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