Room-temperature electron mobility in strained Si/SiGe heterostructures
- 19 July 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (3) , 367-369
- https://doi.org/10.1063/1.110045
Abstract
We report on room-temperature electron transport measurements in modulation-doped strained Si/SiGe heterostructures, grown by ultrahigh-vacuum chemical vapor deposition. A high room-temperature mobility is expected in such samples because of the strain-induced splitting of the conduction band in the silicon channel. Record values of over 2600 cm2/V s have been measured, almost twice the theoretical maximum for relaxed silicon.Keywords
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