Si/Si1−xGex heterostructure field effect transistors fabricated using a low thermal budget CMOS process
- 30 June 2000
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 53 (1-4) , 209-212
- https://doi.org/10.1016/s0167-9317(00)00298-7
Abstract
No abstract availableKeywords
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