Silicon quantum integrated circuits – an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques

This publication has 47 references indexed in Scilit:

• Silicon germanium heterostructures in electronics: the present and the future
  Thin Solid Films, 1998
• Single- and dual-feedback transimpedance amplifiers implemented by SiGe HBT technology
  IEEE Microwave and Guided Wave Letters, 1998
• High-mobility Si and Ge structures
  Semiconductor Science and Technology, 1997
• Manufacturability and applications of SiGe HBT technology
  Solid-State Electronics, 1997
• Recent advances with SiGe heterojunction bipolar transistors
  Thin Solid Films, 1997
• Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
  Journal of Applied Physics, 1996
• Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits
  IEEE Transactions on Electron Devices, 1995
• Si/SiGe epitaxial-base transistors. II. Process integration and analog applications
  IEEE Transactions on Electron Devices, 1995
• SiGe-channel heterojunction p-MOSFET's
  IEEE Transactions on Electron Devices, 1994
• Physics and applications of Ge_xSi_1-x/Si strained-layer heterostructures
  IEEE Journal of Quantum Electronics, 1986