Ambipolar mobility and injection currents in semiconductors with deep traps
- 16 February 1973
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 15 (2) , 735-745
- https://doi.org/10.1002/pssa.2210150246
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Double injection in semiconductors heavily doped with deep two-level trapsSolid-State Electronics, 1970
- Double Injection Currents in Long p-i-n Diodes with One Trapping LevelJournal of Applied Physics, 1970
- Double Injection in Insulators. II. Further Analytic Results with Negative ResistancePhysical Review B, 1970
- Comparative Anatomy of Models for Double Injection of Electrons and Holes into SolidsJournal of Applied Physics, 1964
- Effect of Shallow Trapping and the Thermal-Equilibrium Recombination Center Occupancy on Double-Injection Currents in InsulatorsPhysical Review B, 1964
- Double Injection in Deep-Lying Impurity SemiconductorsJournal of Applied Physics, 1964
- Double Injection in InsulatorsPhysical Review B, 1962
- Current-Carrier Transport with Space Charge in SemiconductorsPhysical Review B, 1961