Properties of Gallium Arsenide Double-Injection Devices
- 1 September 1971
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 42 (10) , 4015-4024
- https://doi.org/10.1063/1.1659719
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- The Light-Emitting-Switch Integrated-Circuit DisplayIEEE Journal of Solid-State Circuits, 1969
- A gallium arsenide double injection diodeSolid-State Electronics, 1968
- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968
- Band-tailing effects and the temperature dependence of radiative recombination in compensated epitaxial GaAs laser junctionsIEEE Journal of Quantum Electronics, 1968
- Investigation of voltage breakdown in semi-insulating GaAsSolid-State Electronics, 1967
- Low-temperature alloy contacts to gallium arsenide using metal halide fluxesSolid-State Electronics, 1966
- The influence of traps on the Watkins - Gunn effectBritish Journal of Applied Physics, 1966
- Absorption Edge of Impure Gallium ArsenidePhysical Review B, 1965
- Double Injection in InsulatorsPhysical Review B, 1962
- Cascade Capture of Electrons in SolidsPhysical Review B, 1960