Microstructure of Low-Resistivity Tin-Doped Indium Oxide Films Deposited at 150∼200°C
- 1 February 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (2B) , L244
- https://doi.org/10.1143/jjap.34.l244
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- A microstructural study of low resistivity tin-doped indium oxide prepared by d.c. magnetron sputteringThin Solid Films, 1994
- Large scale and low resistance ITO films formed at high deposition ratesThin Solid Films, 1993
- Doping mechanisms of tin-doped indium oxide filmsApplied Physics Letters, 1992
- Structural Study of Tin‐Doped Indium Oxide Thin Films Using X‐Ray Absorption Spectroscopy and X‐Ray Diffraction: I . Description of the Indium SiteJournal of the Electrochemical Society, 1992
- Crystallinity and electrical properties of tin-doped indium oxide films deposited by DC magnetron sputteringApplied Surface Science, 1991
- Low resistivity indium–tin oxide transparent conductive films. II. Effect of sputtering voltage on electrical property of filmsJournal of Vacuum Science & Technology A, 1990
- Properties of highly conducting ITO films prepared by ion platingApplied Surface Science, 1988
- Electrochromic devices for transmissive and reflective light controlSolar Energy Materials, 1987
- Influence of substrate temperature and film thickness on the structure of reactively evaporated In2O3 filmsThin Solid Films, 1987
- Electrical and optical properties of In2O3: Sn films prepared by activated reactive evaporationThin Solid Films, 1980