400-mW single-frequency 660-nm semiconductor laser
- 1 July 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 11 (7) , 791-793
- https://doi.org/10.1109/68.769709
Abstract
Using an angled-grating broad-area structure in GaInP-AlInP material system, we obtain single spatial and longitudinal-mode operation at 660 nm. The grating stabilizes the mode to deliver over 400-mW continuous-wave at room temperature from a 60-/spl mu/m-wide stripe. This is about ten times higher than conventional distributed-feedback power output levels, and is the highest single-frequency power from a monolithic semiconductor device in this wavelength range. These devices should be useful for single-mode-fiber coupling and in applications where high-wavelength stability is required, such as spectroscopy, interferometry, or metrology.Keywords
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