Overview of radiation hardening for semiconductor detectors
- 1 March 1990
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Vol. 288 (1) , 54-61
- https://doi.org/10.1016/0168-9002(90)90463-g
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Gamma-Induced Leakage in Junction Field-Effect TransistorsIEEE Transactions on Nuclear Science, 1984
- Radiation Hardness of a Silicon MESFET 4K x 1 sRAMIEEE Transactions on Nuclear Science, 1984
- Irradiated Silicon Gate MOS Device Bias AnnealingIEEE Transactions on Nuclear Science, 1983
- Total Dose Effects in Recessed Oxide Digital Bipolar MicrocircuitsIEEE Transactions on Nuclear Science, 1983
- Ionization of SiO2 by Heavy Charged ParticlesIEEE Transactions on Nuclear Science, 1981
- A Radiation Hardened Field OxideIEEE Transactions on Nuclear Science, 1977
- Process technology for radiation-hardened CMOS integrated circuitsIEEE Journal of Solid-State Circuits, 1976
- Viscous Shear Flow Model for MOS Device Radiation SensitivityIEEE Transactions on Nuclear Science, 1976