Determination of diffusion, partition and sticking coefficients for boron, phosphorus and antimony in silicon
- 31 October 1975
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (10) , 833-838
- https://doi.org/10.1016/0038-1101(75)90003-9
Abstract
No abstract availableKeywords
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- Interactions between Oxygen and Acceptor Elements in SiliconJournal of Applied Physics, 1958