Kinetics of the induction period for the nucleation of silicon on (111) silicon substrates at U.H.V.

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Abstract
Joyce, Bradley and Booker (1967) reported the existence of an induction period for the deposition of silicon by decomposition of silane under U.H.V. conditions using a molecular beam technique. This paper confirms the existence of such an induction period for deposition by sublimation at U.H.V. from an oxygen-free silicon source. The interpretation, which is based on the mechanism suggested by Joyce et al., shows that the activation energy of the mechanism involved is 0·8 ev when reaction takes place with silicon from the vapour phase. An additional high temperature process, which has an activation energy of about 4 ev and may be due to a reaction with silicon from the substrate, is also thought to be possible.