Low-temperature epitaxial growth of doped silicon films and junctions
- 1 October 1969
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (10) , 799-811
- https://doi.org/10.1016/0038-1101(69)90057-4
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- LOW-TEMPERATURE EPITAXIAL GROWTH OF PN JUNCTIONS BY UHV SUBLIMATIONApplied Physics Letters, 1968
- Electrical Properties of n-Type Epitaxial Films of Silicon on Sapphire Formed by Vacuum EvaporationJournal of Applied Physics, 1968
- Low-Temperature Silicon EpitaxyJournal of the Electrochemical Society, 1968
- Low-Temperature Vacuum Deposition of Homoepitaxial SiliconJournal of Applied Physics, 1967
- A NEW MECHANISM FOR STACKING FAULT GENERATION IN EPITAXIAL GROWTH OF SILICON IN ULTRA-HIGH VACUUMApplied Physics Letters, 1967
- Pyrometric Measurements of Si, Ge, and GaAs Wafers Between 100° and 700°CJournal of Applied Physics, 1966
- Controlled doping of germanium layers made by the evaporation-condensation methodSolid-State Electronics, 1966
- EPITAXIAL GROWTH OF Si ON Si IN ULTRA HIGH VACUUMApplied Physics Letters, 1964
- Epitaxial Growth of Silicon by Vacuum SublimationJournal of the Electrochemical Society, 1964
- Low-Energy Electron Diffraction Study of Silicon Surface StructuresThe Journal of Chemical Physics, 1962