Control of impurity density in homoepitaxial semiconductor layers grown by sublimation at UHV
- 30 April 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (4) , 497-501
- https://doi.org/10.1016/0038-1101(73)90188-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Impurity Distribution in Epitaxial GrowthJournal of Applied Physics, 1965
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- Epitaxial Growth of Silicon by Vacuum SublimationJournal of the Electrochemical Society, 1964
- Impurity Redistribution and Junction Formation in Silicon by Thermal OxidationBell System Technical Journal, 1960
- Diffusion of Impurities into Evaporating SiliconJournal of Applied Physics, 1959
- Rate Limitation at the Surface for Impurity Diffusion in SemiconductorsPhysical Review B, 1956