Fabrication and performance of InGaAlAs MQW distributed Bragg reflector lasers with grooved surface gratings formed by reactive beam etching
- 1 February 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Proceedings - Optoelectronics
- Vol. 146 (1) , 39-43
- https://doi.org/10.1049/ip-opt:19990106
Abstract
Grooved surface grating distributed Bragg reflector lasers were fabricated by reactive beam etching after one-step growth of an InGaAlAs multiquantum well active layer and an InP cladding layer. A first-order diffraction grating with a 240 nm period was formed by utilising grooves etched into the cladding layer. The groove depths range between 550 to 900 nm. Single longitudinal mode operation was achieved for devices at all groove depths. DBR lasing with output power of up to 10 mA was obtained. The dependence of the lasing wavelength on device temperature is about 0.1 nm/°C, which indicates the same good stability as standard DBR/DFB lasers. Lasing performance (i.e. injection current against output light power and emission spectra) is discussed in terms of the groove depth of the grating. The relationship between the lasing wavelength shift and the groove depth was examined. The coupling coefficient of the Bragg reflectors are estimated to be about 80 – 180 cm-1 by using the relation between the threshold current density and the reflectivity of the laser cavity mirror.Keywords
This publication has 10 references indexed in Scilit:
- InGaAsP-InP ridge-waveguide DBR lasers with first-order surface gratings fabricated using CAIBEIEEE Photonics Technology Letters, 1997
- Edge-emitting lasers with short-period semiconductor/air distributed Bragg reflector mirrorsIEEE Photonics Technology Letters, 1997
- A strained-layer InGaAs-GaAs asymmetric cladding gain-coupled DFB laser with titanium surface gratings by metalorganic chemical vapor depositionIEEE Photonics Technology Letters, 1997
- Very narrow linewidth asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector lasersIEEE Photonics Technology Letters, 1996
- A Novel Short-Cavity Laser with Deep-Grating Distributed Bragg ReflectorsJapanese Journal of Applied Physics, 1996
- CW performance of an InGaAs-GaAs-AlGaAs laterally-coupled distributed feedback (LC-DFB) ridge laser diodeIEEE Photonics Technology Letters, 1995
- Single-growth-step GaAs/AlGaAs distributed Braggreflector lasers with holographically-defined recessedgratingsElectronics Letters, 1994
- Characterisation of InGaAsP/InP ITG-DFB-BCRW lasers with contacted surface grating for lambda =1.55 µmIEE Proceedings - Optoelectronics, 1994
- Gain- and threshold-current dependence for multiple-quantum-well lasersJournal of Applied Physics, 1988
- A novel GaInAsP/InP distributed feedback laserApplied Physics Letters, 1985