A Study of the Spatial Distribution of the Oxygen Content in Silicon Wafers Using an Infrared Transmission Microscope
- 1 January 1984
- book chapter
- Published by ASTM International
- p. 325-334
- https://doi.org/10.1520/stp32663s
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Simultaneous Determination of the Boron and Phosphorus Content in Silicate Glasses by FT-IR SpectroscopyPublished by ASTM International ,1984
- Thermally Activated Oxygen Donors In SiJournal of the Electrochemical Society, 1982
- Hydrogen‐Implanted Silicon NitrideJournal of the Electrochemical Society, 1982
- Determination of oxygen concentration profiles in silicon crystals observed by scanning IR absorption using semiconductor laserApplied Physics Letters, 1980