Comparative study on structure and internal stress in tin-doped indium oxide and indium-zinc oxide films deposited by r.f. magnetron sputtering
- 30 October 2003
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 445 (2) , 219-223
- https://doi.org/10.1016/j.tsf.2003.08.047
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Internal Stress of ITO, IZO and GZO Films Deposited by RF and DC Magnetron SputteringMRS Proceedings, 2001
- Electrical and Structural Properties of Tin-Doped Indium Oxide Films Deposited by DC Sputtering at Room TemperatureJapanese Journal of Applied Physics, 1999
- Study on Crystallinity of Tin-Doped Indium Oxide Films Deposited by DC Magnetron SputteringJapanese Journal of Applied Physics, 1998
- Study of the effect of Sn doping on the electronic transport properties of thin film indium oxideApplied Physics Letters, 1993
- Doping mechanisms of tin-doped indium oxide filmsApplied Physics Letters, 1992
- Stress-related effects in thin filmsThin Solid Films, 1989
- Evaporated Sn-doped In2O3 films: Basic optical properties and applications to energy-efficient windowsJournal of Applied Physics, 1986
- Applications of Monte Carlo simulation in the analysis of a sputter-deposition processJournal of Vacuum Science & Technology A, 1986
- Thermalization of sputtered atomsJournal of Applied Physics, 1981
- Energetic binary collisions in rare gas plasmasJournal of Vacuum Science and Technology, 1979