Formation of high-quality oxide/nitride stacked layers on rugged polysilicon electrodes by rapid thermal oxidation
- 1 June 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (6) , 1176-1178
- https://doi.org/10.1109/16.214749
Abstract
No abstract availableKeywords
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