Electrical Characteristics of Metal/Cerium Dioxide/Silicon Structures
- 1 February 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (2R)
- https://doi.org/10.1143/jjap.34.548
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Quantitative Analysis of Oxygen Deficiency in Epitaxial CeO2 Layers on Si by Detecting 18O Added for StoichiometryJapanese Journal of Applied Physics, 1994
- Characterization of Epitaxially Grown CeO2(110) Layers on Si by Means of Shadowing Pattern Imaging with Fast Ion BeamsJapanese Journal of Applied Physics, 1994
- Stripe-shaped facetted morphology and domain structure of epitaxial CeO2(110) layers on Si(100) substratesJournal of Crystal Growth, 1993
- RBS/Channeling Study of the Crystallographic Correlation for Epitaxial CeO2 on SiJapanese Journal of Applied Physics, 1993
- Intermediate Amorphous Layer Formation Mechanism at the Interface of Epitaxial CeO2 Layers and Si SubstratesJapanese Journal of Applied Physics, 1993
- Structural and Electrical Properties of Ta2O5 Grown by the Plasma-Enhanced Liquid Source CVD Using Penta Ethoxy Tantalum SourceJapanese Journal of Applied Physics, 1993
- Growth of (110)-oriented CeO2 layers on (100) silicon substratesApplied Physics Letters, 1991
- Low-temperature epitaxial growth of cerium dioxide layers on (111) silicon substratesJournal of Applied Physics, 1991
- Influence of Reactive Gas Pressure on the Properties of Thin Film Ta2O5Japanese Journal of Applied Physics, 1987
- A two-stage monolithic IF amplifier utilizing a Ta2O5capacitorIEEE Transactions on Electron Devices, 1983