Characterization of Epitaxially Grown CeO2(110) Layers on Si by Means of Shadowing Pattern Imaging with Fast Ion Beams
- 1 January 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (1B) , L139-142
- https://doi.org/10.1143/jjap.33.l139
Abstract
Shadowing pattern imaging using keV secondary electrons induced by 56 MeV O8+ ions has been applied to investigate the texture structure of epitaxially grown CeO2(100) layers on Si(100) substrates. The observed shadowing pattern is characteristic of the crystal with a domain structure, i. e., a clear axial image and smeared planar images, which result from the overlapping of two kinds of planar patterns (one is rotated 90° from the other around the axis). The results are consistent with the observations by high-resolution secondary electron microscopy and reflection high-energy electron diffraction.Keywords
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