Surface Layer Analysis of Sputter-Etched Si Using Secondary Electrons Induced by Fast Ions
- 1 May 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (5A) , L650
- https://doi.org/10.1143/jjap.32.l650
Abstract
Thicknesses of amorphized layers on Si(100), (110), and (111) wafers resulting from 45° sputter cleaning with Ar+ in the energy range from 1 to 5 keV have been determined by analyzing secondary electrons induced by 40 MeV O5+ under channeling incidence conditions. Thickness is independent of wafer orientation and increases approximately linearly with Ar+ energy up to 35±5 Å for 5 keV Ar+. Since in the analysis an ambiguity associated with the surface condition of undamaged crystal is eliminated, this method is extremely useful for investigating nanometer-thick disordered surfaces.Keywords
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