MOVPE of AlN and GaN by using novel precursors
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 376-380
- https://doi.org/10.1016/0022-0248(91)90489-r
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wellsApplied Physics Letters, 1990
- Chemical vapor deposition of gallium nitride from diethylgallium azideChemistry of Materials, 1989
- Preparation and Properties of Aluminum Nitride Films Using an Organometallic PrecursorJournal of the Electrochemical Society, 1989
- Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrateThin Solid Films, 1988
- OMVPE of GaN and AIN films by metal alkyls and hydrazineJournal of Crystal Growth, 1986
- Properties and ion implantation of AlxGa1−xN epitaxial single crystal films prepared by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1983
- Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxyJournal of Applied Physics, 1982
- Low Temperature Growth of Gallium NitrideJapanese Journal of Applied Physics, 1981
- Electrical properties of n-type vapor-grown gallium nitrideJournal of Physics and Chemistry of Solids, 1973
- The Use of Metalorganics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971