Analytical low-frequency 1/f noise model for lightly-doped-drain MOSFETs operating in the linear region
- 30 June 1993
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 36 (6) , 899-903
- https://doi.org/10.1016/0038-1101(93)90013-g
Abstract
No abstract availableKeywords
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