An analytic saturation model for drain and substrate currents of conventional and LDD MOSFETs

This publication has 12 references indexed in Scilit:

• Model for the electric fields in LDD MOSFETs. I. Field peaks on the source side
  IEEE Transactions on Electron Devices, 1989
• A model for the electric field in lightly doped drain structures
  IEEE Transactions on Electron Devices, 1987
• An analytic I—V model for lightly doped drain (LDD) MOSFET devices
  IEEE Transactions on Electron Devices, 1987
• A self-consistent pseudo-two-dimensional model for hot-electron current in MOST' s
  IEEE Transactions on Electron Devices, 1986
• An analytic threshold-voltage model for short-channel enhancement mode n-channel MOSFETs with double boron channel implantation
  Solid-State Electronics, 1986
• Dependence of channel electric field on device scaling
  IEEE Electron Device Letters, 1985
• A new substrate and gate current phenomenon in short-channel LDD and minimum overlap devices
  IEEE Electron Device Letters, 1985
• A simple method to characterize substrate current in MOSFET's
  IEEE Electron Device Letters, 1984
• Hot carrier degradation modes and optimization of LDD MOSFETs
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1984
• A unified model for hot-electron currents in MOSFET's
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1981