A study on excimer laser amorphous silicon film crystallization

This publication has 11 references indexed in Scilit:

• Excimer-laser-induced crystallization of hydrogenated amorphous silicon
  Applied Physics Letters, 1990
• On-Chip Bottom-Gate Polysilicon and Amorphous Silicon Thin-Film Transistors Using Excimer Laser Annealing
  Japanese Journal of Applied Physics, 1990
• Low temperature crystallization of amorphous silicon using an excimer laser
  Journal of Electronic Materials, 1990
• High-performance TFTs fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon film
  IEEE Transactions on Electron Devices, 1989
• Flat-panel displays displace large, heavy, power-hungry CRTs
  IEEE Spectrum, 1989
• UV Pulsed Laser Annealing of Si⁺ Implanted Silicon Film and Low-Temperature Super-Thin Film Transistors
  Japanese Journal of Applied Physics, 1989
• Surface doping of semiconductors by pulsed-laser irradiation in reactive atmosphere
  Applied Physics A, 1988
• Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation
  Journal of Applied Physics, 1985
• Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation
  Physical Review Letters, 1984
• Bulk nucleation and amorphous phase formation in highly undercooled molten silicon
  Applied Physics Letters, 1984