Numerical simulation of sidegating effect in GaAs MESFET's

This publication has 11 references indexed in Scilit:

• Two dimensional transient device simulator with deep trap model for compound semiconductor devices
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• Sidegating effect of GaAs MESFETs and leakage current in a semi-insulating GaAs substrate
  IEEE Electron Device Letters, 1990
• Inclusion of impact ionization in the backgating of GaAs FETs
  IEEE Electron Device Letters, 1990
• Impact ionization of deep traps in semi-insulating GaAs substrates
  Journal of Applied Physics, 1990
• Two-dimensional numerical simulation of side-gating effect in GaAs MESFETs
  IEEE Transactions on Electron Devices, 1990
• Temperature dependence of backgating effect in GaAs integrated circuits
  IEEE Electron Device Letters, 1985
• Shielding of backgating effects in GaAs integrated circuits
  IEEE Electron Device Letters, 1985
• Geometrical and light-induced effects on back-gating in ion-implanted GaAs MESFET's
  IEEE Transactions on Electron Devices, 1985
• Surface electrical breakdown with white-light emission on semi-insulating GaAs substrates
  Electronics Letters, 1984
• The effect of backgating on the design and performance of GaAs digital integrated circuits
  IEEE Transactions on Electron Devices, 1982