OBIC studies on 6H-SiC Schottky rectifiers with different surface pretreatments
- 1 August 1997
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 6 (10) , 1396-1399
- https://doi.org/10.1016/s0925-9635(97)00111-8
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- OBIC measurements on planar high-voltage p+ -n junctions with diamond-like carbon films as passivation layerApplied Surface Science, 1993
- Laser light spot mapping of depletion in power semiconductor devicesPhysica Status Solidi (a), 1979
- Higher Absorption Edges inSiCPhysical Review B, 1968