MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice matched to InP
- 1 July 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 11 (7) , 770-772
- https://doi.org/10.1109/68.769702
Abstract
The first demonstration of a one-step-growth vertical-cavity surface-emitting laser (VCSEL) at 1.56 /spl mu/m by low-pressure metal-organic vapor phase epitaxy in the InGaAlAs (/spl lambda//sub gap/=1.43 /spl mu/m)-InAlAs system lattice matched to InP is presented. The VCSEL's threshold current density was 7.5 kA/cm/sup 2/ and pulsed lasing had been obtained up to +55/spl deg/C for 45-/spl mu/m diameter proton implanted devices. This material system represents a high potential for continuous-wave VCSELs at 1.55-/spl mu/m wavelength using a simple approach for large-scale industrial production.Keywords
This publication has 9 references indexed in Scilit:
- Record high characteristic temperature (
T
o
= 122 K)of 1.55 µm strain-compensated AlGaInAs/AlGaInAs MQW lasers withAlAs/AlInAs multiquantum barrierElectronics Letters, 1999
- Low threshold InGaAlAs monolithic vertical cavity bistable device at 1.5 μm wavelengthApplied Physics Letters, 1997
- Monolithic vertical cavity device lasing at 1.55µm in InGaAlAs systemElectronics Letters, 1997
- 64°C continuous-wave operation of 1.5-μm vertical-cavity laserIEEE Journal of Selected Topics in Quantum Electronics, 1997
- Double-fused 1.52-μm vertical-cavity lasersApplied Physics Letters, 1995
- Spectroscopic ellipsometry: a useful tool to determine the refractive indices and interfaces of In0.52Al0.48As and In0.53AlxGa0.47−xAs layers on InP in the wavelength range 280–1900 nmMaterials Science and Engineering: B, 1993
- Refractive indexes of (Al,Ga,In)As epilayers on InP for optoelectronic applicationsIEEE Photonics Technology Letters, 1992
- High reflectivity 1.55 μm InP/InGaAsP Bragg mirror grown by chemical beam epitaxyApplied Physics Letters, 1991
- Lattice thermal resistivity of III–V compound alloysJournal of Applied Physics, 1983