0.13μm SiGe BiCMOS technology for mm-wave applications
- 1 October 2008
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This paper presents a complete 0.13 mum SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280GHz f T /f MAX ) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2fF/mum 2 high-linearity MIM capacitor and complementary double gate oxide MOS transistors.Keywords
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